PART |
Description |
Maker |
R1RP0408DGE-2PR R1RP0408D R1RP0408DGE-2LR |
4M High Speed SRAM (512-kword 8-bit) 4M High Speed SRAM (512-kword ?8-bit) 4M High Speed SRAM (512-kword ?8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
R1RW0416DSB-2PI R1RW0416DGE-2PI R1RW0416DI |
Memory>Fast SRAM>Asynchronous SRAM Wide Temperature Range Version 4M High Speed SRAM (256-kword 】 16-bit) Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
R1RP0416DI-15 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
HM62W16255H |
4M High Speed SRAM (256-kword ?16-bit)(4M楂?????RAM(256k瀛??16浣?)
|
Hitachi,Ltd.
|
R1RW0416DGE-0PI R1RW0416DSB-0PI R1RW0416DI10 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
HM62W16255CJPI12 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword 16-bit) 宽温版本4分高速SRAM56 - KWord的?16位)
|
Hitachi,Ltd.
|
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
HN58X2464TIE HN58X2464FPIE HN58X2464I |
Two-wire serial interface 8k EEPROM (1-kword 】 8-bit)/16k EEPROM (2-kword 】 8-bit) 32k EEPROM (4-kword 】 8-bit)/64k EEPROM (8-kword 】 8-bit)
|
Renesas Electronics Corporation
|
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|